S1ZB60-4101 vs DF005S-GT3 feature comparison

S1ZB60-4101 Shindengen Electronic Manufacturing Co Ltd

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DF005S-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SHINDENGEN ELECTRIC MANUFACTURING CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Part Package Code DIP
Package Description R-PDSO-G4 R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 600 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.05 V 1.1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e0
Moisture Sensitivity Level 2 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C
Output Current-Max 0.8 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 600 V 50 V
Reverse Current-Max 0.00001 µA
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Reference Standard UL RECOGNIZED

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