S1GH vs US1G-E3/61T feature comparison

S1GH Taiwan Semiconductor

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US1G-E3/61T Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Package Description SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code not_compliant not_compliant
Factory Lead Time 4 Weeks 8 Weeks
Samacsys Manufacturer Taiwan Semiconductor Vishay
Additional Feature SNUBBER DIODE FREE WHEELING DIODE
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 40 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 400 V 400 V
Reverse Current-Max 1 µA 10 µA
Reverse Recovery Time-Max 1.5 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 2
Breakdown Voltage-Min 400 V
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Reverse Test Voltage 400 V
Time@Peak Reflow Temperature-Max (s) 30

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