S1DF-T
vs
EGF1DHE3_B/H
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
VISHAY INTERTECHNOLOGY INC
Package Description
SMAF, 2 PIN
Reach Compliance Code
not_compliant
unknown
Application
GENERAL PURPOSE
EFFICIENCY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.1 V
1 V
JESD-30 Code
R-PDSO-F2
R-PDSO-C2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
30 A
30 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-65 °C
Output Current-Max
1 A
1 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
FLAT
C BEND
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Factory Lead Time
8 Weeks
Additional Feature
FREE WHEELING DIODE, HIGH RELIABILITY
JEDEC-95 Code
DO-214BA
Reference Standard
AEC-Q101
Reverse Recovery Time-Max
0.05 µs
Reverse Test Voltage
200 V
Compare S1DF-T with alternatives
Compare EGF1DHE3_B/H with alternatives