S1B-G vs US1BHE3/61T feature comparison

S1B-G Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet

US1BHE3/61T Vishay Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
Additional Feature LOW POWER LOSS FREE WHEELING DIODE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-214AC DO-214AC
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 2.5 µs 0.05 µs
Surface Mount YES YES
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Base Number Matches 6 1
Pbfree Code Yes
Part Package Code DO-214AC
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.80
Application GENERAL PURPOSE
Forward Voltage-Max (VF) 1 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Terminal Finish Matte Tin (Sn)

Compare S1B-G with alternatives

Compare US1BHE3/61T with alternatives