S1B vs VS-1ENH01HM3/84A feature comparison

S1B Galaxy Microelectronics

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VS-1ENH01HM3/84A Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 0.92 V
Non-rep Pk Forward Current-Max 40 A 40 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 175 °C
Output Current-Max 1 A 1 A
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount YES YES
Base Number Matches 10 1
HTS Code 8541.10.00.80
Factory Lead Time 8 Weeks
Date Of Intro 2019-01-30
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, SNUBBER DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
Application ULTRA FAST RECOVERY
Breakdown Voltage-Min 100 V
Diode Element Material SILICON
JEDEC-95 Code DO-220AA
JESD-30 Code R-PDSO-F2
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Reverse Current-Max 2 µA
Reverse Recovery Time-Max 0.028 µs
Reverse Test Voltage 100 V
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare VS-1ENH01HM3/84A with alternatives