RSJ550N10TL
vs
IRF543
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROHM CO LTD
HARRIS SEMICONDUCTOR
Package Description
LPTS, 3 PIN
Pin Count
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
ROHM Semiconductor
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
80 V
Drain Current-Max (ID)
55 A
25 A
Drain-source On Resistance-Max
0.0189 Ω
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e2
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
110 A
100 A
Surface Mount
YES
NO
Terminal Finish
Tin/Copper (Sn/Cu)
TIN LEAD
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
16
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
230 mJ
Case Connection
DRAIN
JEDEC-95 Code
TO-220AB
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
150 W
Power Dissipation-Max (Abs)
150 W
Qualification Status
Not Qualified
Turn-off Time-Max (toff)
135 ns
Turn-on Time-Max (ton)
133 ns
Compare RSJ550N10TL with alternatives
Compare IRF543 with alternatives