RS3AHV6G
vs
US3ABF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
TAIWAN SEMICONDUCTOR CO LTD
GALAXY SEMI-CONDUCTOR CO LTD
Package Description
SMC, 2 PIN
R-PDSO-F2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
HIGH FORWARD SURGE CURRENT CAPABILITY
EFFICIENCY
Breakdown Voltage-Min
50 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.3 V
1 V
JEDEC-95 Code
DO-214AB
JESD-30 Code
R-PDSO-C2
R-PDSO-F2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
100 A
100 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
3 A
3 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
250
NOT SPECIFIED
Reference Standard
AEC-Q101
Rep Pk Reverse Voltage-Max
50 V
50 V
Reverse Current-Max
10 µA
10 µA
Reverse Recovery Time-Max
0.15 µs
0.05 µs
Reverse Test Voltage
35 V
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Terminal Form
C BEND
FLAT
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Base Number Matches
1
2
Compare RS3AHV6G with alternatives
Compare US3ABF with alternatives