RS2BAM2G
vs
RS2BAF2G
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
Package Description |
SMA, 2 PIN
|
SMA, 2 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
EFFICIENCY
|
EFFICIENCY
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.3 V
|
1.3 V
|
JEDEC-95 Code |
DO-214AC
|
DO-214AC
|
JESD-30 Code |
R-PDSO-C2
|
R-PDSO-C2
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Non-rep Pk Forward Current-Max |
50 A
|
50 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Output Current-Max |
1.5 A
|
1.5 A
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Reverse Current-Max |
5 µA
|
5 µA
|
Reverse Recovery Time-Max |
0.15 µs
|
0.15 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
C BEND
|
C BEND
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
Base Number Matches |
1
|
1
|
|
|
|
Compare RS2BAM2G with alternatives
Compare RS2BAF2G with alternatives