RS1MFS vs RGP10MZ feature comparison

RS1MFS Taiwan Semiconductor

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RGP10MZ Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code not_compliant unknown
Additional Feature LOW POWER LOSS
Application EFFICIENCY GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JESD-30 Code R-PDSO-F2 O-PALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.5 µs 0.5 µs
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form FLAT WIRE
Terminal Position DUAL AXIAL
Base Number Matches 1 2
ECCN Code EAR99
JEDEC-95 Code DO-15
Peak Reflow Temperature (Cel) 260

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