RS1M-T vs RGF1MHE3_B/I feature comparison

RS1M-T Taiwan Semiconductor

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RGF1MHE3_B/I Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant unknown
Application EFFICIENCY EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 1.3 V
JEDEC-95 Code DO-214AC DO-214BA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 30 A 30 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 1000 V 1000 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.5 µs 0.5 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 4 1
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.80
Factory Lead Time 8 Weeks
Date Of Intro 2020-10-09
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT
Reference Standard AEC-Q101
Reverse Test Voltage 1000 V

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