RN4981FE(T5LMAA,F) vs EMF21T2R feature comparison

RN4981FE(T5LMAA,F) Toshiba America Electronic Components

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EMF21T2R ROHM Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1 BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-F6 R-PDSO-F6
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN AND PNP NPN AND PNP
Surface Mount YES YES
Terminal Form FLAT FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code SC-107
Pin Count 6
Samacsys Manufacturer ROHM Semiconductor
JESD-609 Code e2
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Terminal Finish Tin/Copper (Sn/Cu)
Time@Peak Reflow Temperature-Max (s) 10

Compare RN4981FE(T5LMAA,F) with alternatives

Compare EMF21T2R with alternatives