RN4606TE85N vs EMD59T2R feature comparison

RN4606TE85N Toshiba America Electronic Components

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EMD59T2R ROHM Semiconductor

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G6 SC-107C, 6 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G6 R-PDSO-F6
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN AND PNP NPN AND PNP
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 1 1
Rohs Code Yes
Factory Lead Time 13 Weeks
Samacsys Manufacturer ROHM Semiconductor
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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