RN2969TE85N
vs
RN2969(TE85R)
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G6
|
SMALL OUTLINE, R-PDSO-G6
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT-IN BIAS RESISTOR RATIO IS 2.14
|
BUILT-IN BIAS RESISTOR RATIO IS 2.14
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Base Capacitance-Max |
6 pF
|
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
70
|
70
|
| JESD-30 Code |
R-PDSO-G6
|
R-PDSO-G6
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| VCEsat-Max |
0.3 V
|
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
6
|
|
|
|
Compare RN2969TE85N with alternatives
Compare RN2969(TE85R) with alternatives