RN2209(TPE4)
vs
BCR198B6327HTSA1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TOSHIBA CORP
INFINEON TECHNOLOGIES AG
Package Description
IN-LINE, R-PSIP-T3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 0.468
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
6 pF
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
70
JESD-30 Code
R-PSIP-T3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
190 MHz
VCEsat-Max
0.3 V
Base Number Matches
1
1
Rohs Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare RN2209(TPE4) with alternatives
Compare BCR198B6327HTSA1 with alternatives