RN2103FV vs RN2209(TPE4) feature comparison

RN2103FV Toshiba America Electronic Components

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RN2209(TPE4) Toshiba America Electronic Components

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-F3 IN-LINE, R-PSIP-T3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 0.468
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70 70
JESD-30 Code R-PDSO-F3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form FLAT THROUGH-HOLE
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Collector-Base Capacitance-Max 6 pF
VCEsat-Max 0.3 V

Compare RN2103FV with alternatives

Compare RN2209(TPE4) with alternatives