RN1902(TE85R) vs 934056189125 feature comparison

RN1902(TE85R) Toshiba America Electronic Components

Buy Now Datasheet

934056189125 NXP Semiconductors

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Pin Count 6 6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 21
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50 100
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code SC-88
JESD-609 Code e3
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RN1902(TE85R) with alternatives

Compare 934056189125 with alternatives