RN1317(T5L,PP,F) vs DTC114ELATL2 feature comparison

RN1317(T5L,PP,F) Toshiba America Electronic Components

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DTC114ELATL2 ROHM Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 0.47 BUILT-IN BIAS RESISTOR RATIO IS 1, DIGITAL
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type NPN NPN
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pin Count 3
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
VCEsat-Max 0.3 V

Compare RN1317(T5L,PP,F) with alternatives

Compare DTC114ELATL2 with alternatives