We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

RN1315(TE85L2) vs RN1114(T5LPEW,F) feature comparison

RN1315(TE85L2) Toshiba America Electronic Components

Buy Now Datasheet

RN1114(T5LPEW,F) Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.22 BUILT IN BIAS RESISTANCE RATIO IS 10
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50 50
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare RN1315(TE85L2) with alternatives

Compare RN1114(T5LPEW,F) with alternatives