We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

RN1308(TE85R) vs RN1405S,LF(D feature comparison

RN1308(TE85R) Toshiba America Electronic Components

Buy Now Datasheet

RN1405S,LF(D Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.468 BUILT-IN BIAS RESISTOR RATIO IS 21.3636
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 80
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
HTS Code 8541.21.00.75
Collector-Base Capacitance-Max 6 pF
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
VCEsat-Max 0.3 V
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare RN1308(TE85R) with alternatives

Compare RN1405S,LF(D with alternatives