RN1301(TE85L,F)
vs
DTB143EKT146
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TOSHIBA CORP
ROHM CO LTD
Package Description
SMALL OUTLINE, R-PDSO-G3
SC-59, 3 PIN
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
ROHM Semiconductor
Additional Feature
BUILT IN BAIS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
47
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
PNP
PNP
Power Dissipation-Max (Abs)
0.1 W
0.2 W
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
200 MHz
Base Number Matches
1
1
Pbfree Code
Yes
Part Package Code
SC-59
Pin Count
3
Factory Lead Time
18 Weeks
JESD-609 Code
e1
Moisture Sensitivity Level
1
Operating Temperature-Max
150 °C
Qualification Status
Not Qualified
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max
0.3 V
Compare RN1301(TE85L,F) with alternatives
Compare DTB143EKT146 with alternatives