RN1301(TE85L,F) vs DTB143EKT146 feature comparison

RN1301(TE85L,F) Toshiba America Electronic Components

Buy Now Datasheet

DTB143EKT146 ROHM Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 SC-59, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Toshiba ROHM Semiconductor
Additional Feature BUILT IN BAIS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 47
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.1 W 0.2 W
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SC-59
Pin Count 3
Factory Lead Time 18 Weeks
JESD-609 Code e1
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Qualification Status Not Qualified
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
VCEsat-Max 0.3 V

Compare RN1301(TE85L,F) with alternatives

Compare DTB143EKT146 with alternatives