RN1211 vs MMUN2233LT3 feature comparison

RN1211 Toshiba America Electronic Components

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MMUN2233LT3 onsemi

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ON SEMICONDUCTOR
Package Description CYLINDRICAL, O-XBCY-T3 CASE 318-08, 3 PIN
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR BUILT IN BIAS RESISTOR RATIO IS 10
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 120 80
JESD-30 Code O-XBCY-T3 R-PDSO-G3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE GULL WING
Terminal Position BOTTOM DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 5
Pbfree Code No
Rohs Code No
Part Package Code SOT-23
Manufacturer Package Code CASE 318-08
JEDEC-95 Code TO-236AB

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