RN1117(TE85R)
vs
KSR1005J18Z
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
TOSHIBA CORP
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-PBCY-T3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 2.13
BUILT-IN BIAS RESISTOR RATIO IS 0.47
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
250 MHz
Base Number Matches
1
1
Compare RN1117(TE85R) with alternatives
Compare KSR1005J18Z with alternatives