RN1114(T5LPEW,F)
vs
RN1202(TPE4)
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
TOSHIBA CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
IN-LINE, R-PSIP-T3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
BUILT IN BIAS RESISTANCE RATIO IS 10
|
BUILT IN BIAS RESISTOR RATIO IS 1
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| JESD-30 Code |
R-PDSO-G3
|
R-PSIP-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
| Base Number Matches |
1
|
1
|
| Pin Count |
|
3
|
| Samacsys Manufacturer |
|
Toshiba
|
| Collector-Base Capacitance-Max |
|
6 pF
|
| Operating Temperature-Max |
|
150 °C
|
| Qualification Status |
|
Not Qualified
|
| VCEsat-Max |
|
0.3 V
|
|
|
|
Compare RN1114(T5LPEW,F) with alternatives
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RN1114(T5LPEW,F) vs RN1416(TE85R)
-
RN1114(T5LPEW,F) vs RN1318(TE85L)
-
RN1114(T5LPEW,F) vs RN1402(T5RCK,F)
-
RN1114(T5LPEW,F) vs RN1402(TE85R)
-
RN1114(T5LPEW,F) vs RN1314(TE85L)
-
RN1114(T5LPEW,F) vs RN1402(T5LMIB,F)
-
RN1114(T5LPEW,F) vs RN1315(TE85R)
-
RN1114(T5LPEW,F) vs RN1115MFV(TL3PAV)
-
RN1114(T5LPEW,F) vs 2SC3864
Compare RN1202(TPE4) with alternatives