RN1103F vs BRA143ECM feature comparison

RN1103F Toshiba America Electronic Components

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BRA143ECM Hitachi Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer TOSHIBA CORP HITACHI LTD
Package Description SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 70 20
JESD-30 Code R-PDSO-F3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN PNP
Power Dissipation-Max (Abs) 0.1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 2

Compare RN1103F with alternatives

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