RN1102F
vs
BCR533
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
TOSHIBA CORP
SIEMENS A G
Package Description
SMALL OUTLINE, R-PDSO-F3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.5 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
50
70
JESD-30 Code
R-PDSO-F3
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.1 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
250 MHz
100 MHz
Base Number Matches
1
2
HTS Code
8541.21.00.95
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
0.33 W
VCEsat-Max
0.3 V
Compare RN1102F with alternatives
Compare BCR533 with alternatives