RN1101
vs
NTE2367
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TOSHIBA CORP
NTE ELECTRONICS INC
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-PBCY-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Toshiba
NTE ELECTRONICS
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1
DIGITAL, BUILT IN BIAS RESISTOR
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Base Number Matches
26
1
Part Package Code
TO-92
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
JESD-30 Code
O-PBCY-T3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
ROUND
Package Style
CYLINDRICAL
Polarity/Channel Type
NPN
Power Dissipation-Max (Abs)
0.3 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
250 MHz
Compare RN1101 with alternatives
Compare NTE2367 with alternatives