RN1101 vs DTC143EE feature comparison

RN1101 Toshiba America Electronic Components

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DTC143EE ROHM Semiconductor

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Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 DIGITAL, BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Base Capacitance-Max 6 pF
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 20
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.1 W 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V
Base Number Matches 26 10
HTS Code 8541.21.00.75
JESD-609 Code e1
Moisture Sensitivity Level 1
Power Dissipation Ambient-Max 0.15 W
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)

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