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RN1101(TE85R) vs RN1101 feature comparison

RN1101(TE85R) Toshiba America Electronic Components

Buy Now Datasheet

RN1101 Toshiba America Electronic Components

Buy Now Datasheet
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type NPN
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 250 MHz
Base Number Matches 1 1
Pbfree Code No
Rohs Code Yes
Samacsys Manufacturer Toshiba
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare RN1101(TE85R) with alternatives

Compare RN1101 with alternatives