RN1001(TPE2) vs DTC143XVATV3 feature comparison

RN1001(TPE2) Toshiba America Electronic Components

Buy Now Datasheet

DTC143XVATV3 ROHM Semiconductor

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description CYLINDRICAL, O-PBCY-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 2.1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 30 30
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style CYLINDRICAL IN-LINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position BOTTOM SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 250 MHz 250 MHz
Base Number Matches 1 1
Pin Count 3
Operating Temperature-Max 150 °C
VCEsat-Max 0.3 V

Compare RN1001(TPE2) with alternatives

Compare DTC143XVATV3 with alternatives