RJK0365DPA-02-J0 vs IPD12N03LBG feature comparison

RJK0365DPA-02-J0 Renesas Electronics Corporation

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IPD12N03LBG Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-N5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8 4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0127 Ω 0.0116 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PSSO-G2
JESD-609 Code e4 e3
Number of Elements 1 1
Number of Terminals 5 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 30 W 52 W
Pulsed Drain Current-Max (IDM) 120 A 120 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au) MATTE TIN
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-252AA
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 64 mJ
JEDEC-95 Code TO-252AA
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260

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