RJK0365DPA-02#J0B vs IPB13N03LB feature comparison

RJK0365DPA-02#J0B Renesas Electronics Corporation

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IPB13N03LB Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP INFINEON TECHNOLOGIES AG
Part Package Code WPAK(3F) D2PAK
Package Description SMALL OUTLINE, R-PDSO-N5 SMALL OUTLINE, R-PSSO-G2
Pin Count 8 4
Manufacturer Package Code PWSN0008DC
Reach Compliance Code compliant compliant
ECCN Code 5A002 EAR99
Samacsys Manufacturer Renesas Electronics
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0127 Ω 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 5 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Surface Mount YES YES
Terminal Form NO LEAD GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 64 mJ
JEDEC-95 Code TO-263AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 52 W
Qualification Status Not Qualified
Terminal Finish MATTE TIN

Compare RJK0365DPA-02#J0B with alternatives

Compare IPB13N03LB with alternatives