RH829AE3
vs
1N829A143
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MICROSEMI CORP
NXP SEMICONDUCTORS
Package Description
O-LALF-W2
O-LALF-W2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
METALLURGICALLY BONDED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-204AA
DO-34
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.5 W
0.4 W
Reference Voltage-Nom
6.2 V
6.2 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Temp Coeff-Max
0.031 mV/°C
0.031 mV/°C
Voltage Tol-Max
4.84%
Base Number Matches
1
1
Qualification Status
Not Qualified
Working Test Current
7.5 mA
Compare RH829AE3 with alternatives
Compare 1N829A143 with alternatives