RGP30JZ vs 1N5626GP/93-E3 feature comparison

RGP30JZ Galaxy Semi-Conductor Co Ltd

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1N5626GP/93-E3 Vishay Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD VISHAY SEMICONDUCTORS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application FAST RECOVERY GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 5 µA
Reverse Recovery Time-Max 0.25 µs 3 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code DO-201AD
Pin Count 2
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
JESD-609 Code e3
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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