RGP30AZ vs EGP30A feature comparison

RGP30AZ Galaxy Microelectronics

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EGP30A Taitron Components Inc

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAITRON COMPONENTS INC
Package Description O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Application FAST RECOVERY SUPER FAST RECOVERY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.3 V 0.95 V
JEDEC-95 Code DO-27 DO-201AD
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 50 V 50 V
Reverse Current-Max 5 µA 5 µA
Reverse Recovery Time-Max 0.15 µs 0.035 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Additional Feature LOW LEAKAGE CURRENT
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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