RFP3055LE vs RFP15N06 feature comparison

RFP3055LE Rochester Electronics LLC

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RFP15N06 Rochester Electronics LLC

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown unknown
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 11 A 15 A
Drain-source On Resistance-Max 0.107 Ω 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB TO-204AA
JESD-30 Code R-PSFM-T3 O-MBFM-P2
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL COMMERCIAL
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form THROUGH-HOLE PIN/PEG
Terminal Position SINGLE BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pulsed Drain Current-Max (IDM) 40 A

Compare RFP3055LE with alternatives

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