RFP2N12
vs
IRF613
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
120 V
150 V
Drain Current-Max (ID)
2 A
2.6 A
Drain-source On Resistance-Max
1.75 Ω
2.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
5 A
6.5 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
ECCN Code
EAR99
HTS Code
8541.29.00.95
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
43 W
Power Dissipation-Max (Abs)
43 W
Turn-off Time-Max (toff)
34 ns
Turn-on Time-Max (ton)
38 ns
Compare RFP2N12 with alternatives
Compare IRF613 with alternatives