RFP2N10 vs IRF2807 feature comparison

RFP2N10 Harris Semiconductor

Buy Now Datasheet

IRF2807 Infineon Technologies AG

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer HARRIS SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 75 V
Drain Current-Max (ID) 2 A 82 A
Drain-source On Resistance-Max 1.05 Ω 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 25 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 25 W
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 5 A 280 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 70 ns
Turn-on Time-Max (ton) 70 ns
Base Number Matches 2 54
Package Description FLANGE MOUNT, R-PSFM-T3
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 340 mJ
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare RFP2N10 with alternatives

Compare IRF2807 with alternatives