RFP14N05L
vs
SPU14N05
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
MEGAFET
AVALANCHE RATED
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
55 V
Drain Current-Max (ID)
14 A
13.5 A
Drain-source On Resistance-Max
0.1 Ω
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-251
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
35 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
2
Part Package Code
TO-251
Package Description
PLASTIC PACKAGE-3
Pin Count
3
Avalanche Energy Rating (Eas)
52 mJ
Pulsed Drain Current-Max (IDM)
54 A
Compare RFP14N05L with alternatives
Compare SPU14N05 with alternatives