RFP12N10L
vs
RFP8P05
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
HARRIS SEMICONDUCTOR
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
50 V
Drain Current-Max (ID)
12 A
8 A
Drain-source On Resistance-Max
0.2 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-220AB
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
75 W
40 W
Pulsed Drain Current-Max (IDM)
30 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
HTS Code
8541.29.00.95
Additional Feature
MEGAFET
Power Dissipation Ambient-Max
48 W
Turn-off Time-Max (toff)
100 ns
Turn-on Time-Max (ton)
60 ns
Compare RFP12N10L with alternatives
Compare RFP8P05 with alternatives