RFL1N10
vs
BS107RL1
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
MOTOROLA INC
Reach Compliance Code
unknown
unknown
Category CO2 Kg
8.8
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
200 V
Drain Current-Max (ID)
1 A
0.25 A
Drain-source On Resistance-Max
1.2 Ω
6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
25 pF
JEDEC-95 Code
TO-205AF
TO-92
JESD-30 Code
O-MBCY-W3
O-PBCY-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
Terminal Form
WIRE
THROUGH-HOLE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Package Description
CYLINDRICAL, O-PBCY-T3
ECCN Code
EAR99
Additional Feature
EUROPEAN PART NUMBER
Operating Temperature-Max
150 °C
Compare RFL1N10 with alternatives
Compare BS107RL1 with alternatives