RFG50N06 vs STP25N06FI feature comparison

RFG50N06 Fairchild Semiconductor Corporation

Buy Now Datasheet

STP25N06FI STMicroelectronics

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP STMICROELECTRONICS
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 50 A 16 A
Drain-source On Resistance-Max 0.022 Ω 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247 TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 131 W 40 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 1
Pbfree Code Yes
Part Package Code TO-220AB
Package Description ISOWATT220, 3 PIN
Pin Count 3
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 100 mJ
Feedback Cap-Max (Crss) 200 pF
Power Dissipation Ambient-Max 35 W
Pulsed Drain Current-Max (IDM) 100 A
Turn-on Time-Max (ton) 175 ns

Compare RFG50N06 with alternatives

Compare STP25N06FI with alternatives