RFG45N06LE
vs
IRL3705ZSPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERSIL CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
45 A
75 A
Drain-source On Resistance-Max
0.028 Ω
0.008 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
142 W
Power Dissipation-Max (Abs)
142 W
130 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
185 ns
Turn-on Time-Max (ton)
215 ns
Base Number Matches
3
2
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
180 mJ
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
340 A
Time@Peak Reflow Temperature-Max (s)
30
Compare RFG45N06LE with alternatives
Compare IRL3705ZSPBF with alternatives