RFD8P06LESM9A
vs
2SJ239
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INTERSIL CORP
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
IN-LINE, R-PSIP-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
8 A
5 A
Drain-source On Resistance-Max
0.33 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
1
HTS Code
8541.29.00.95
Samacsys Manufacturer
Toshiba
Additional Feature
LOGIC LEVEL COMPATIBLE
Power Dissipation Ambient-Max
20 W
Compare RFD8P06LESM9A with alternatives
Compare 2SJ239 with alternatives