RFD16N06SM
vs
BUK7618-55/T3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
55 V
Drain Current-Max (ID)
16 A
57 A
Drain-source On Resistance-Max
0.047 Ω
0.018 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
125 mJ
Feedback Cap-Max (Crss)
250 pF
Operating Temperature-Max
175 °C
Power Dissipation Ambient-Max
125 W
Pulsed Drain Current-Max (IDM)
228 A
Turn-off Time-Max (toff)
88 ns
Turn-on Time-Max (ton)
82 ns
Compare RFD16N06SM with alternatives
Compare BUK7618-55/T3 with alternatives