RFD16N06SM vs RFD16N06SM9A feature comparison

RFD16N06SM Harris Semiconductor

Buy Now Datasheet

RFD16N06SM9A Intersil Corporation

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR INTERSIL CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 16 A 16 A
Drain-source On Resistance-Max 0.047 Ω 0.047 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 72 W 72 W
Power Dissipation-Max (Abs) 72 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 125 ns 125 ns
Turn-on Time-Max (ton) 65 ns 65 ns
Base Number Matches 2 1