RFD16N06LESM9A vs BUK9506-75B feature comparison

RFD16N06LESM9A Intersil Corporation

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BUK9506-75B NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INTERSIL CORP NXP SEMICONDUCTORS
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature MEGAFET, LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 75 V
Drain Current-Max (ID) 16 A 75 A
Drain-source On Resistance-Max 0.047 Ω 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
Pbfree Code Yes
Part Package Code TO-220AB
Package Description PLASTIC, SC-46, 3 PIN
Pin Count 3
Avalanche Energy Rating (Eas) 852 mJ
JESD-609 Code e3
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 612 A
Terminal Finish TIN

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