RFD14N05SM9A vs MTD8N06E feature comparison

RFD14N05SM9A Harris Semiconductor

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MTD8N06E Motorola Mobility LLC

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 50 V 60 V
Drain Current-Max (ID) 14 A 8 A
Drain-source On Resistance-Max 0.1 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 48 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns
Base Number Matches 1 2
Rohs Code No
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 369A-13
JESD-609 Code e0
Power Dissipation-Max (Abs) 40 W
Terminal Finish TIN LEAD

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