RF1S45N06LESM
vs
AUIRF3710ZSTRL
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
INTERNATIONAL RECTIFIER CORP
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Additional Feature |
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
100 V
|
Drain Current-Max (ID) |
45 A
|
59 A
|
Drain-source On Resistance-Max |
0.028 Ω
|
0.018 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263AB
|
TO-263AB
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
142 W
|
|
Power Dissipation-Max (Abs) |
142 W
|
160 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN OVER NICKEL
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
185 ns
|
97 ns
|
Turn-on Time-Max (ton) |
215 ns
|
94 ns
|
Base Number Matches |
4
|
2
|
Pbfree Code |
|
Yes
|
Package Description |
|
D2PAK-3/2
|
Pin Count |
|
3
|
Avalanche Energy Rating (Eas) |
|
200 mJ
|
Feedback Cap-Max (Crss) |
|
150 pF
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Min |
|
-55 °C
|
Pulsed Drain Current-Max (IDM) |
|
240 A
|
Reference Standard |
|
AEC-Q101
|
|
|
|
Compare RF1S45N06LESM with alternatives
Compare AUIRF3710ZSTRL with alternatives