RF1K4922396
vs
FY3ABJ-03
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
RENESAS ELECTRONICS CORP
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
2.5 A
3 A
Drain-source On Resistance-Max
0.36 Ω
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
2
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Part Package Code
SOT
Pin Count
8
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
1.8 W
Pulsed Drain Current-Max (IDM)
21 A
Compare RF1K4922396 with alternatives
Compare FY3ABJ-03 with alternatives