RF1K49154 vs MMDF1N05ER2 feature comparison

RF1K49154 Fairchild Semiconductor Corporation

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MMDF1N05ER2 Motorola Mobility LLC

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP MOTOROLA INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 50 V
Drain Current-Max (ID) 2 A 2 A
Drain-source On Resistance-Max 0.13 Ω 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2 W 2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 4
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Additional Feature AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 300 mJ
Pulsed Drain Current-Max (IDM) 10 A

Compare RF1K49154 with alternatives

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